It is demonstrated that analysis of the shape of diffracted beams in LEED can be used to determine the size and separation distribution functions of structurally incoherent regions growing on a crystalline substrate. The method has been used to investigate the growth of In clusters on cleaved GaAs(110). An exponent of x=0.5±{}0.15 is obtained for the change in mean island size with dose. The data imply that coalescence is important in the growth process.
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Kruger et al. (1989) studied this question.
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