An InP Gunn device with a graded doping profile was evaluated for third-harmonic power extraction around 480 GHz. The oscillator used the configuration of a WR-6 waveguide cavity for the InP Gunn device, two back-to-back waveguide transitions, WR-3→1.5 and WR-1.7→3, to block fundamental and second-harmonic frequencies, and WR-6 waveguide spacers to optimise the location of the reactive termination at the fundamental frequency. With 350 µm-thick spacers, the oscillator yielded an RF output power of more than 85 µW at 479.01 GHz.
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H. Eisele (2010) studied this question.
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