Germanium near infrared detector in silicon on insulator

The authors demonstrate near infrared photodetectors in evaporated germanium on silicon-on-insulator waveguides. The authors achieve peak responsivities as high as 1A∕W and dark current densities as low as 40nA at a reverse bias of 1V. Owing to the low deposition temperature, this technology allows for simple and low cost monolithic integration with silicon.