The quantum efficiency of p-i-n light emitting diodes with thick fully strained Si 0.80 Ge 0.20 /Si(001) has been studied with the aim to optimize light emission from SiGe. Electroluminescence spectra and external quantum efficiency were measured in a wide range of temperature and injection current for diodes with different thicknesses of the SiGe layer. From the detailed analysis of thickness and injection current dependence of emission, a maximum value for the internal quantum efficiency of 0.5% at 100 K and 0.1% at room temperature were obtained.
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Stoïca et al. (2003) studied this question.
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