A 128×128-pixel standard-CMOS image sensor with electronic shutter

A 128/spl times/128-pixel image sensor with a 20 s-10/sup -4/ s electronic shutter has been integrated in a 1.2-/spl mu/m digital CMOS technology. The pixel cell consists of four PMOS transistors and a photodiode with antiblooming suppression. Each pixel measures 24 /spl mu/m by 24 /spl mu/m and has a fill factor of 25%. Current is used to transfer pixel signals to the column readout amplifiers in order to minimize voltage swings on the highly capacitive column lines. Correlated double sampling is used to reduce intracolumn fixed pattern noise. The saturation voltage is 470 mV. The peak output signal to noise ratio is 45 dB, and the optical dynamic range is 56 dB. The frame transfer rate is 1.7 ms per frame.