Silicon bipolar integrated circuits for multigigabit-per-second lightwave communications

Recent results on silicon bipolar ICs for lightwave communications in the multigigabits-per second (Gb/s) range are presented. These state-of-the-art results demonstrate the inherent speed difference between the different types of basic circuits. With the fastest ones (multiplexing and demultiplexing), bit rates above 10 Gb/s are achieved, even with production technologies. The technologies, as well as circuit and design principles to achieve such high operating speeds, are discussed, and some experimental examples are described in more detail. Moreover, the high-speed potential of present 1- mu m silicon bipolar technologies is demonstrated by the simulation of carefully optimized communication ICs. With most of the basic circuits, bit rates above 10 Gb/s, and in some cases above 20 Gb/s, are achievable.>