Ferromagnetism in transition-metal-doped III-V and II-VI compound semiconductors and their heterostructures allow exploration of unprecedented possibilities, in which spin degrees of freedom and more common charge degrees of freedom are combined. These include quantum heterostructures that incorporate ferromagnetism, electric field as well as light control of ferromagnetism, and magnetization reversal by electrical means. Possibilities of achieving high ferromagnetic-transition temperature are also discussed
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Dietl et al. (2007) studied this question.
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