Reactive partially ionized beam deposition of BaTiO3 thin films

A dual-source reactive partially ionized beam deposition has been employed to deposit thin BaTiO3 films on the Si(100) substrate at room temperature. It is shown that with a small amount (3%) of Ti and oxygen ions in the beam one can dramatically control the electrical properties of the films. From the capacitance versus voltage (C-V) characteristics, the flatband voltage and the total interface charge density were measured to be 0.3 V and 1×1011/cm2, respectively. These ferroelectric compound oxide thin films with high-dielectric constant are potentially useful in high density memory applications.