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Electron-mobility values in n-type GaAs at 77 K were computed utilizing a variational procedure and taking into account all major scattering mechanisms. Mobility values are tabulated as a function of electron concentrations, providing a convenient means for the determination of the compensation ratio, i.e., the determination of the total concentration of ionized impurities.
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Walukiewicz et al. (1982) studied this question.
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