⌘+K

Pulse Explore Communities Researchers Journals

Home Communities Explore

February 23, 2010Semiconductor Science and Technology

Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2gate stacks

Jörn Hinz Anton J. Bauer Tobias Thiede Roland A. Fischer L. Frey

View at Publisher

Ask AI

Bookmark

Share

No abstract yet

We only have this paper's title and publication details.

Read it at the source→

Abstract

Art.045009, 8 S.

Discussion

No takes yet. Share an insight, caveat, or question.

Cite This Study

Hinz et al. (2010) studied this question.

synapsesocial.com/papers/6a94f1380af64aa4440b2359 https://doi.org/10.1088/0268-1242/25/4/045009

View at Publisher

Ask AI

Bookmark

Share

Keep reading

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1Physical and electrical properties of metal gate electrodes on HfO2 gate dielectricsOriginal Research · 2002 · 100 citations
2Advanced high-κ dielectric stacks with polySi and metal gates: Recent progress and current challengesReview · 2006 · 273 citations
3Fermi Pinning-Induced Thermal Instability of Metal-Gate Work FunctionsOriginal Research · 2004 · 132 citations
4Comparison of effective work function extraction methods using capacitance and current measurement techniquesOriginal Research · 2006 · 39 citations
5Evaluation of Atomic Layer Deposited NbN and NbSiN as Metal Gate MaterialsOriginal Research · 2006 · 16 citations

More related papers

Controlled Growth of TaN, Ta<sub>3</sub>N<sub>5</sub>, and TaO<i><sub>x</sub></i>N<i><sub>y</sub></i> Thin Films by Atomic Layer Deposition1999
Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition2005
Deposition of Niobium Nitride Thin Films from Tert‐Butylamido‐Tris‐(Diethylamido)‐Niobium by a Modified Industrial MOCVD Reactor2009

More from Semiconductor Science and Technology

Metallisation-associated degradation of silicon coated with thin dielectric layersFri,
a -plane GaN-based fully vertical FinFETs with normally-off operationWed,