Impurities and structural defects have a strong influence on the kinetics of thin film reactions. We have investigated the effect of Cu on the kinetics of formation and microstructure of in the temperature rangeof 375°–450°C. We found that the presence of 1 weight percent Cu in the Al changes both the activation energy and the pre‐exponential factor of the growth law. At the same time, the Cu influences the microstructure of the growing phase and smoothens the reaction interface. The results are discussed in terms of possible diffusion mechanisms in .
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Wittmer et al. (1985) studied this question.
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