Answers are grounded in this paper and cite their sources.
Oxygen gettering by Ti overlayer (2–8nm) on a HfO2(3nm)∕SiO2(1.5nm)∕Si(001) structure was investigated using high-resolution Rutherford backscattering spectroscopy. After deposition of a thin Ti layer, the interfacial SiO2 layer is reduced by ∼0.2nm and the released oxygen is incorporated in Ti layer. Subsequent annealing at 330°C in UHV causes further reduction by 0.1–0.8nm depending on the Ti layer thickness. In addition to the reduction of the SiO2 layer, significant oxygen depletion in the HfO2 layer was observed for thicker Ti layers after annealing.
No takes yet. Share an insight, caveat, or question.
Nakajima et al. (2007) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: