The nitrogen/oxygen replacement reaction which occurs during rapid thermal nitridation (RTN) of oxides has been investigated by Auger electron spectroscopy and Fourier transform infrared spectroscopy techniques. Results have indicated that out-diffusion rate of nitridation by-products is responsible for the observed nitrogen profile in RTN oxides. Based on the results, an attempt has been made to describe the mechanism of the nitridation reaction. The proposed mechanism considers the diffusion of NHx species and nitridation by-products along with the structural modifications in SiO2 during RTN. Electrical measurements on metal-oxide-semiconductor capacitors were used to further support the proposed mechanism for the nitridation process.
No takes yet. Share an insight, caveat, or question.
Shih et al. (1990) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: