We present a microprobe Raman scattering study of the strain in a ZnSe heterostructure with GaAs, Ge, and Si. Measurements taken at adjacent sites of different distances from the interface prove Raman scattering to be a very powerful tool for detecting the strain and distinguishing between local high strains and macroscopic low strains.
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Krost et al. (1990) studied this question.
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