Effect of Ba on the oxidation of the Si(100) surface

Si oxidation in the Ba/Si(110) system has been studied by Auger-electron spectroscopy (AES) and low-energy electron diffraction as a function of Ba and oxygen exposure. The rate of the Si oxidation under elevated temperatures has been shown to be significantly enchanced by monolayer (ML) amounts of Ba. Under very high Ba exposures ({}4 ML), the Si oxidation in the Ba/Si(100) system was, however, promoted more rapidly at room temperature than at 700 ^∘{}C. AES data have also shown the formation of Ba silicide after Ba exposures of >1 ML and anneal to about 600 ^∘{}C.