Avalanche p-i-n photodiodes of various mesa areas were fabricated on AlN templates for back illumination for enhanced performance through hole-initiated multiplication, and the effects of increased area on device performance were studied. Avalanche multiplication was observed in mesa sizes up to 14063μm2 under linear mode operation. Uniform gain and a linear increase of the dark current with area were demonstrated.
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Minder et al. (2007) studied this question.
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