GaAs-GaAlAs monomode phase modulators have been made from MBE-grown heterostructures using reproducible fabrication techniques. A π phase shift at 9 V was obtained for a device length of 4.2 mm. With an internal optical loss <2.5 dB and modulation capability to >1.2 Gbit s−1, these devices show superior overall performance to any previously reported semiconductor guided-wave devices.
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Houghton et al. (1984) studied this question.