We report on the inductive bandwidth enhancement of InGaAs metal-semiconductor-metal photodetectors with finger spacings in the sub-μm range. For optimized circuit design, the calculated frequency response predicts an improvement of the 3-dB bandwidth by more than a factor of two. A first implementation using InAlAs-InGaAs:Fe MSM detectors with 0.7-μm finger spacing results in a 28-GHz bandwidth demonstrating the feasibility of the approach.
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Kühl et al. (1995) studied this question.
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