Quasi-two-dimensional MESFET simulations for CAD

A comprehensive quasi-two-dimensional simulation that has been applied to the design and modeling of submicrometer recessed-gate GaAs MESFETs is described. A detailed energy transport model using a fast and accurate algorithm is solved. The model accounts for avalanche breakdown and gate conduction. DC and microwave characteristics are obtained from the model. An accurate approach for simulating frequency-, amplitude-, and bias-dependent two-port RF parameters is described, and the results obtained are compared to measured data. The agreement between measured and predicted data is found to be excellent.>