Adding a spike to quantum wells (QWs) provides an additional degree of freedom for QW engineering. The authors demonstrate this by designing a spiked shallow InGaAs/InGaAlAs well for efficient, polarisation independent electroabsorption modulation at 1.55 µm. An improvement in power saturation of more than several orders of magnitude is observed.
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Devaux et al. (1997) studied this question.
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