Electron mobility and 2DEG concentration in MBE-grown, selectively doped In0.53Ga0.47As/N-In0.52Al0.48As heterostructures, lattice-matched to InP, were studied as a function of Si-doping concentration in N-In0.52Al0.48As. A 2DEG concentration of as high as 3.7×1012 cm-2 (µ=22,000cm2/Vs at 77 K) was achieved with a Si-doping concentration of 5×1018 cm-3 in N-In0.52Al0.48As. This N s value is the highest 2DEG concentration ever reported for selectively doped single-interface heterostructures, and is almost four times higher than that of conventional GaAs/N-AlGaAs heterostructures.
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Nakata et al. (1987) studied this question.
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