A technique is described that combines controlled anodic oxidation with differential Hall data to obtain electrical carrier concentration profiles of ion‐implanted indium phosphide. Reproducible oxide layers are grown using a citric acid, ethylene glycol electrolyte bath and a controlled voltage rise technique. A variation in material consumption with anodic oxide thickness and with anodizing technique is observed. For the purposes of demonstration, silicon and sulfur species implanted at 1 MeV to fluences of are examined. These profiles are measured on <100> implanted semi‐insulating . The technique could be adapted to measure other alloys in the system.
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Lorenzo et al. (1979) studied this question.