This letter deals with the atomically flat interfaces at GaAs/AlGaAs heterojunctions grown by a modified metalorganic chemical vapor deposition, flow-rate modulation epitaxy. Single quantum wells show low-temperature photoluminescence with narrower linewidths than those grown by conventional metalorganic chemical vapor deposition. An x-ray diffraction spectrum of (GaAs)2 (AlAs)2 superlattices exhibits no forbidden (003) and (001) diffractions, suggesting that the interfaces are fairly flat.
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Kobayashi et al. (1987) studied this question.
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