Numerically generated resonant tunneling diode equivalent circuit parameters

We present results from a numerical solution of a resonant tunneling diode structure, using a time-independent Schrödinger equation without considering scattering. Intrinsic circuit parameters such as conductance, capacitance, and inductance are extracted from the numerical results and compared with experimental data obtained from dc and microwave characterization of GaAs/AlGaAs devices. A study of the influence of different lightly doped spacer layer thicknesses on the emitter side reveals the relationship between spacer layer thickness and the circuit parameters. From these results, we provide explanations for the behavior of the biased diode circuit parameters. The simulated data show good qualitative agreement with experimental results; possible explanations for deviations between experimental values and simulated data, including inelastic scattering and series resistance effects, are discussed.