Site Occupancy and VUV–UV–Vis Photoluminescence of the Lanthanide Ions in BaY2Si3O10

This work provides a scheme to investigate the site occupancy and the luminescence properties of lanthanide ions in BaY 2 Si 3 O 10 . The Rietveld refinement of the samples indicates that the lanthanide ions preferably occupy the Y 3+ sites in BaY 2 Si 3 O 10 . It is confirmed that valence state of lanthanide ions is stable at +3 in all doping samples. The site-dependent spectroscopic properties of Ce 3+ and Eu 3+ are studied in VUV–UV–vis spectral region at low temperatures, and the polarization effect on Ce 3+ luminescence decay is evaluated. The results indicate that the lanthanide ions experience the similar polarization effect when substituting the Y 3+ sites in BaY 2 Si 3 O 10 . The Stokes shift of Ce 3+ luminescence becomes larger as Ce 3+ doping content increases. Eu 3+ f–f line-shape change has not been observed in the spectra as Eu 3+ content increases. It demonstrates that the change of the electrostatic binding effect in the lattice has little effect on the ligand polarization of the central lanthanide ion. Finally, a mechanism is proposed to explain why the thermal-quenching of Ce 3+ luminescence is negligible in BaY 2 Si 3 O 10 even if the temperature increases up to 500 K. The influence of dynamic ion–lattice interaction on luminescence properties of the lanthanide ions in BaY 2 Si 3 O 10 is discussed in detail.