Carrier density fluctuations in a two‐level impurity semiconductor

The general method for the computation of generation‐recombination noise spectra in three‐level systems has been applied to a p‐type semiconductor with a double acceptor (e.g. Zn‐doped Ge) and to a p‐type semiconductor with a center that can accept and donate electrons (e.g. Au‐doped Ge). In both cases the spectrum has been expressed in measurable quantities as carrier densities and relaxation times. Special attention was paid to the temperature range where both impurity levels are active simultaneously in the G–R process.