Correlation Enhanced Resistance Hysteresis Near Half Filling in MoS 2 /WSe 2 Heterobilayer

Ferroelectricity, typically arising from ionic displacements in noncentrosymmetric lattices, enables applications in memory devices and sensors. Recent advances in two-dimensional materials and van der Waals heterostructures have revealed novel ferroelectric phenomena, including sliding ferroelectricity and correlation-driven ferroelectricity in moiré superlattices. In this work, we fabricate and study a MoS 2 /WSe 2 moiré superlattice device exhibiting a high field-effect mobility of 17650 cm 2 V −1 s −1 . Electrical transport measurements reveal correlated insulating states accompanied by a prominent and reproducible resistance hysteresis near half-filling. Temperature and displacement field dependence further confirms the correlation-enhanced nature of the hysteresis. Our analysis suggests that displacement field-induced metal-to-insulator transition at correlated insulating state coupled with interfacial dipoles enables the observed resistance hysteresis. These results establish correlation enhanced resistance hysteresis near half-filling in a MoS 2 /WSe 2 heterobilayer, offering opportunities for exploring emergent quantum phases and device functionalities.