High-Yield Two-Dimensional CdS Nanowire Networks Synthesized by a Low-Temperature Chemical Method

We report here on a one-step chemical procedure for the synthesis of monolayer and multilayer CdS square grid planar nanowire networks (SGP-NWNs). This procedure utilizes a chelation−deposition−epitaxy (CDE) mechanism to convert Cd(CH 3 COO) 2 ·2H 2 O/S/C 32 H 66 through the multilayer structures of bismuth triiodide (BiI 3 ) flakes to CdS SGP-NWNs. In the CDE synthesis, ordered pyramid-shaped nanoparticles and SGP-NWNs were formed at 160 and 185 °C, respectively. TEM and SEM characterizations indicate that the SGP networks consist of interconnected CdS single-crystalline nanowires. A systematic investigation of the correlation between the preparation conditions and the morphologies of the nanostructures suggests that the formation of SGP-NWNs is attributed to the electrostatic force between the Bi−I bonds and Cd cations acting on the CdS nanowire isotropic crystalline growth. Further experimentation demonstrates that using BiI 3 flake and CDE procedures similar to nanowire networks of different chemical compositions can be synthesized on a variety of substrates.