For the first time, GaAs-based 1.5 µm singlemode emission has been realised utilising GaInNAs active-layer material and lateral distributed feedback. The double quantum well separate confinement laser structure was grown by plasma-assisted molecular beam epitaxy. A threshold current of 240 mA and an external efficiency of 0.11 W/A could be demonstrated with a sidemode suppression ratio of better than 26 dB in pulsed operation. Singlemode emission up to 1506.5 nm has been realised.
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Gollub et al. (2004) studied this question.
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