DC and high-frequency characteristics of GaN-based IMPATTs

This is the authors' abstract. We don't add key points for this paper.

The dynamic characteristics of wurtzite (Wz) phase and zincblende (Znb) phase GaN IMPATTs are reported at D-band and compared with Si and GaAs-based IMPATT devices at the same operating conditions and frequency of operation. It is shown that GaN-based IMPATTs are potential candidates for replacing traditional IMPATTs at high frequency of operation.