ZnSe nanowires (NWs) are grown on GaAs substrates via vapor–solid–liquid molecular beam epitaxy. TEM studies show that ZnSe NWs with diameters of about 10 nm, grown at a high temperature, favor the <110> direction (see image), whereas those grown at a low temperature favor the <111> direction; NW diameter also affects the growth direction.
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Cai et al. (2006) studied this question.
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