An amorphous silicon/silicon-carbide double barrier structure with 2.66 peak to valley current ratio negative resistance

Amorphous silicon/silicon-carbide double barrier structure with 2.66 peak to valley ratio single negative resistance and 1.146/1.174 double negative resistance under room temperature are studied. Theoretical analysis and experimental investigation employed to raise peak to valley current ratio and to obtain multiple negative resistances current-voltage curve are also included.