The low-temperature doping of silicon by radiation-induced diffusion

Low-temperature doping of silicon by the radiation-induced diffusion (RID) is investigated theoretically and experimentally. It is estimated that RID of impurities diffusing on interstitial sites in silicon can occur in accordance with impurity recharging models. The possibility of Pd or Co doping of silicon at 45 °C using Co60 γ-radiation (1800 Rs−1) is confirmed experimentally.