The study of diffusion of nickel (Ni63) in silicon single crystals in the temperature range 450 to 800 °C supports the “dissociative diffusion mechanism” for this impurity. Rapid interstitial diffusion of Ni into Si is followed by a complex reaction of interstitials with vacancies resulting in particular concentration profiles of substitutional nickel. The production and diffusion of vacancies which has a great influence on this reaction, is discussed. The activation energy for diffusion of vacancies has been estimated to 44 kcal/mol and the self‐diffusivity in silicon can be approximately described by .
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H.P. Bonzel (1967) studied this question.
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