The growth of an ordered Mn layer on the Si(111)- 1 × 1–Ho surface

The growth of ordered Mn layers on room temperature and liquid nitrogen cooled Si(111)- 1 × 1-Ho surfaces has been studied using scanning tunnelling microscopy. We have shown for 4 ML (monolayers) of Mn grown on a cooled Si(111)- 1 × 1-Ho surface that an ordered Mn layer is produced without any, or with only limited, silicide formation. This surface exhibits a [Formula: see text] low energy electron diffraction pattern. Significant variations in Mn island sizes have also been seen on the Si(111)-1 × 1-Ho and Si(111)-7 × 7 surfaces for Mn deposited at room temperature and at -180 °C.