Analysis of Backscattering Phenomenon from Drain Region in Silicon Decanano Diode

We have analyzed the backscattering phenomenon from a drain region of a silicon (Si) decanano diode to investigate the backscattering effect on the characteristics of such a Si decanano device. Ensemble Monte Carlo (EMC) simulation is employed for considering the scattering effect with backscattered electrons from the drain region. The results of the numerical experiment revealed the following noteworthy conclusions. The count and rate of scattering with the backscattered electrons are low, even near a drain edge in a channel of the Si decanano diode. The average velocity of injected electrons from a source region in the channel is little degraded by scattering with the backscattered electrons from the drain region. Furthermore, the average velocity of all electrons in the channel significantly decreases near the drain edge due to the presence of very slow backscattered electrons as an average. Since the presence of backscattered electrons strongly degrades the performance of decanano devices, we believe it is increasingly important to analyze the backscattering phenomenon from the drain region, with the progress of the miniaturization of the decanano device.