Capture and emission of electrons by the resonant state strongly coupled to the lattice in n -InSb

The pressure and temperature dependences of the free-electron capture cross section σ and the emission rate α are determined for the defect level which is resonant at ambient pressure and becomes bound at pressures $p>700$ MPa. Irrespective of the level position, i.e., for the level being resonant as well as bound, both σ and α are thermally activated and their activation energies are the linear functions of pressure. It is found that, during the capture or emission process, the adiabatic potential barrier which originates from the strong defect-lattice coupling cannot be practivally tunneled. It means that the barrier is very extensive and the capture or emission process leads to the drastic rearrangement of the defect center in the crystal lattice.