p-GaN Activation by Electrochemical Potentiostatic Method

An electrochemical potentiostatic activation method was examined to enhance the hole concentration of p-type GaN epitaxial layer. The hole concentration was more than double, with a mobility of after an electric voltage was applied. At an optimal applied voltage of 3 V, the hole concentration was enhanced about 2.4 times from to . The p-GaN films dissolved in the KOH solution at high applied voltages above 9 V. The secondary-ion mass spectrometry analysis indicated that nearly 70% of the hydrogen atoms were removed by this activation method.