Influences of Charged Dislocations on Performance of III-V Compound Semiconductor FinFETs

We present a model for charged dislocations effects on III-V compound semiconductor based FinFETs performance. The model is developed to obtain momentum relaxation time and, from it, key device performance parameters such as effective mobility, threshold voltage, and finally saturation drain current. We find out that charged threading edge dislocation density of a FinFET channel should be smaller than about 10 7 cm -2 to ignore the dislocation scattering impact on the device performance which is roughly one order more strict condition than previously known condition for wurtzite GaN.