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We investigate the evaporation of As atoms from the surface and the diffusion of Si and Be in δ-doped layers, for (111)A and (100) GaAs. As atoms on the (111)A surface do not easily evaporate compared with those on the (100) surface. The diffusion of dopants in (111)A GaAs is smaller than in (100) GaAs, independent of the presence of As vacancies. The diffusion in (100) GaAs, on the contrary, is enhanced by the presence of As vacancies.
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Shinoda et al. (1993) studied this question.
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