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Measurements of recombination emission with optical injection were performed at 90 and 10°K on both natural and Te-, Se-, and S-compensated GaSb. Five levels localized in the gap of GaSb are involved in the recombinations. The appearance of these various levels is discussed in terms of their positions with respect to the Fermi level. Electron-hole recombination and band-impurity recombination were observed. Radiative inter-impurity recombination was not observed.
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Campos et al. (1970) studied this question.
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