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InGaAs/GaAs strained-layer superlattices have been grown by molecular beam epitaxy and characterized with photoconductivity measurements. The layers were doped p type by diffusion of Zn in an ohmic contact annealing process. A sudden reduction in room-temperature photoconductivity of the p-type samples was observed at photon energies slightly below the GaAs band gap in all of the samples. This spectral feature is proposed to originate from photoionization of acceptor-like defect states in GaAs, and a model accounting for this phenomenon is discussed.
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Salokatve et al. (1991) studied this question.
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