Threading dislocation reduction in a GaN film with a buffer layer grown at an intermediate temperature

This is the authors' abstract. We don't add key points for this paper.

Remarkable reduction of the threading dislocation (TD) density has been achieved by inserting a GaN layer grown at an intermediate temperature (900 °C) (IT-GaN layer), just prior to the growth of GaN at 1040 °C by using a hydride vapor phase epitaxy. The variation in the dislocation density variation along the growth direction was observed by using cathodoluminescence (CL) and transmission electron microscopy (TEM). A cross-sectional CL image revealed that the reduction of the TD density happened during the growth of IT-GaN layer. The TEM measurement provided the proof that the TD reduction could be ascribed to the masking of the TD by stacking faults in the IT-GaN layer.