Excitonic luminescence of GaN after irradiation with 0.42-MeV electrons has been investigated in detail. The low-energy irradiation generates damage exclusively in the N sublattice. Additional bound-exciton lines are found and are shown to arise from a hydrogenic donor with a binding energy of 25 meV. The donor binding energy, bound-exciton localization energy, and bound-exciton lifetime are discussed in comparison with the values observed for ON and SiGa in the same sample. Nitrogen vacancies VN forming a hydrogenic donor state are suggested to be the most likely origin of this luminescence emission. Finally, a metastable behavior related to the damage-induced defects is reported and discussed in conjunction with interstitial-nitrogen-related defects.
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Yang et al. (2003) studied this question.
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