Comparison of the material properties of GaInN structures grown with ammonia and dimethyl‐hydrazine as nitrogen precursors

Dimethyl-hydrazine (DMHy) has been used as additional nitrogen source for the metalorganic vapour phase epitaxy of GaInN layers on GaN. The optical characterization shows a shift of the corresponding GaInN-peak position to higher energies due to a reduced In incorporation, even for small amounts of DMHy and independent of the growth temperature. This may be caused by the hydrogen which is released from DMHy during growth. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)