Bandgap radiation in the presence of gaseous oxygen induces surface and selvedge photo-oxidation of amorphous GeS 2 . The phenomenon involves preferential oxidation of the Ge sites and may be understood in terms of the structural and electronic properties of GeS 2 . Such photo-oxidized films exhibit very different properties towards the subsequent deposition of Ag, as compared with untreated films. The inverse system (GeS 2 deposition on Ag) exhibits markedly different interfacial properties, not previously recognized: this could have significant implications for the interpretation of bulk photodiffusion experiments.
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Horton et al. (1993) studied this question.
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