Hole transport in vapour-deposited As2S3

Measurements are reported of hole mobility and dielectric dispersion in evaporated layers of pure and metal-doped As 2 S 3 between -50 and +100 degrees C. The field and temperature dependence of mobility, and the temperature dependence of permittivity, suggest that a previously proposed model for mobility controlled by charged traps is applicable. On this interpretation the field-free non-activated part of the mobility is estimated to be approximately=0.5 cm 2 V -1 s -1 , suggesting a mixed drift/hopping mode of transport. A trap cluster model is proposed to account for limited lifetime.