Theoretical investigation of InGaN self-pulsating laser diodes for optical storage applications

Self-pulsating laser diodes operating at 420 nm are required in high-density optical storage devices. By growing saturable absorbing quantum wells in the p-doped cladding layer, of a semiconductor laser, it is possible to obtain the interplay between gain and absorption, which is required for pulsation. The dynamics of self-pulsating InGaN laser diodes are investigated to gain an insight into how the quantum-well configuration in the absorber and the cavity length affect the laser output. In particular, the work shows how a carefully designed structure gives rise to stable self-pulsation up to a temperature of 100°C while offering high powered emission at low operating currents. As a result, such blue-emitting laser diodes are highly desirable for use within next-generation optical storage devices.