GaP single crystals were irradiated by 3 MeV electrons at 20 K to a dose of 4 × 1018 e/cm2. An isochronal annealing in temperature region 77 ÷ 650 K followed the irradiation. Positron lifetime measurement indicated the presence of irradiation‐induced vacancies in Ga sublattice. The vacancies disappeared at two stages observed at temperatures 200 ÷ 300 K and 450 ÷ 550 K.
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Gupta et al. (1988) studied this question.