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We present a combined theoretical and experimental investigation of photoionization along the Ne isoelectronic sequence and show that the near-threshold behavior of the cross section for Si⁴⁺ differs radically from the nearby ions in the sequence. We demonstrate that the general nature of the underlying physics implies that dramatic changes in near-threshold behavior may be expected for many other ions.
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Chakraborty et al. (1999) studied this question.
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